NickelMaghrebV1, France, Analysis, bibRecord, 000098

Study of insulating electrical conductivity in hydrogenated amorphous silicon-nickel alloys at very low temperature

Identifieur interne : 000098 ( France/Analysis ); précédent : 000097; suivant : 000099

Study of insulating electrical conductivity in hydrogenated amorphous silicon-nickel alloys at very low temperature

Auteurs : A. Narjis [Maroc] ; A. El Kaaouachi [Maroc] ; L. Limouny [Maroc] ; S. Dlimi [Maroc] ; A. Sybous [Maroc] ; J. Hemine [Maroc] ; R. Abdia [Maroc] ; G. Biskupski [France]

Source :

Physica. B, Condensed matter [ 0921-4526 ] ; 2011.

RBID : Pascal:11-0440766

Descripteurs français

Pascal (Inist)
- Conductivité électrique, Transition métal isolant, Conduction saut, Interaction électron électron, Densité état électron, Niveau Fermi, Composition chimique, Point critique, Matériau amorphe hydrogéné, Nickel alliage, Alliage amorphe, Silicium alliage, Saut à distance variable.

English descriptors

KwdEn :
- Amorphous alloy, Amorphous hydrogenated material, Chemical composition, Critical points, Electrical conductivity, Electron-electron interactions, Electronic density of states, Fermi level, Hopping conduction, Metal-insulator transition, Nickel alloys, Silicon alloys.

Abstract

On the insulating side of the metal-insulator transition (MIT), the study of the effect of low temperatures T on the electrical transport in amorphous silicon-nickel alloys a-Si1-yNiy:H exhibits that the electrical conductivity follows, at the beginning, the Efros-Shklovskii Variable Range Hopping regime (ES VRH) with T-1/2. This behaviour showed that long range electron-electron interaction reduces the Density Of State of carriers (DOS) at the Fermi level and creates the Coulomb gap (CG). For T higher than a critical value of temperature Tc, we obtained the Mott Variable Range Hopping regime with T-1/4, indicating that the DOS becomes almost constant in the vicinity of the Fermi level. The critical temperature TC decreases with the content of nickel in the alloys.

Affiliations:

France, Maroc

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Pascal:11-0440766

Le document en format XML

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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Amorphous alloy</term>
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<term>Electrical conductivity</term>
<term>Electron-electron interactions</term>
<term>Electronic density of states</term>
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<term>Densité état électron</term>
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<term>Composition chimique</term>
<term>Point critique</term>
<term>Matériau amorphe hydrogéné</term>
<term>Nickel alliage</term>
<term>Alliage amorphe</term>
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<front><div type="abstract" xml:lang="en">On the insulating side of the metal-insulator transition (MIT), the study of the effect of low temperatures T on the electrical transport in amorphous silicon-nickel alloys a-Si1-yNiy:H exhibits that the electrical conductivity follows, at the beginning, the Efros-Shklovskii Variable Range Hopping regime (ES VRH) with T-1/2. This behaviour showed that long range electron-electron interaction reduces the Density Of State of carriers (DOS) at the Fermi level and creates the Coulomb gap (CG). For T higher than a critical value of temperature Tc, we obtained the Mott Variable Range Hopping regime with T-1/4, indicating that the DOS becomes almost constant in the vicinity of the Fermi level. The critical temperature TC decreases with the content of nickel in the alloys.</div>
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Study of insulating electrical conductivity in hydrogenated amorphous silicon-nickel alloys at very low temperature

Study of insulating electrical conductivity in hydrogenated amorphous silicon-nickel alloys at very low temperature

Source :

Descripteurs français

English descriptors

Abstract

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Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri